A real-time study of hydrogenated amorphous silicon, microcrystalline silicon, and amorphous silicon carbide growth by optically enhanced infrared reflectance spectroscopy

A new, optically enhanced reflection infrared spectroscopy technique is presented to study thin film growth in real time. Here, real time means under actual processing conditions, with a short data acquisition time compared to film changes or growth rates. This technique has industrial application in monitoring and controlling processes which involve a large or complex parameter space. These include interface control and the fundamentals of crystal growth, plasma deposition, and etching. These applications are illustrated in the thesis by studying the deposition of hydrogenated amorphous silicon (a-Si:H), microcrystalline silicon (μc-Si:H), and hydrogenated amorphous silicon carbide $\rm (a-Si\sb{1-x}C\sb{x}$:H) thin films by reactive magnetron sputtering. Complimentary information about the film microstructure is obtained from real time spectroscopic ellipsometry measurements.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Katiyar, Monica

Contributors dc:contributor

• Abelson, John R.

• Engineering, Materials Science

Statement dc:rights

• Copyright 1994 Katiyar, Monica

Language dc:language

eng

Identifier

AAI9512421
(UMI)AAI9512421

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21704