Back to results
University of Illinois at Urbana-Champaign
The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition
Abstract
dc:descriptionMetalorganic chemical vapor deposition (MOCVD) is a crystal growth technique which has demonstrated the capacity to deposit epitaxial layers possessing the high levels of crystalline quality and material purity required for the fabrication of state of the art devices in a variety of material systems. In this work, the MOCVD process and reactor design and operation are discussed in detail. Variations in material quality as a function of MOCVD growth parameters and the associated ramifications when applied to the growth of laser structures are also analyzed.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Givens, Michael Eugene
- Contributors dc:contributor
-
- Coleman, James J.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1992 Givens, Michael Eugene
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9215815
(UMI)AAI9215815 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/21660