Characterization of shallow impurities in high-purity gallium arsenide and indium phosphide using photothermal ionization spectroscopy: Nonequilibrium incorporation of amphoteric impurities

The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the characterization techniques, Hall-effect measurements, photothermal ionization spectroscopy (PTIS), and photoluminescence (PL). These quantitative analyses have been made on over 500 different GaAs samples provided from about 50 different laboratories and 50 different InP samples from 15 different laboratories as grown by the growth techniques of liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD). With these quantitative analyses, the incorporation and amphoteric behavior of Group IV impurities have been correlated with the growth techniques and various independent growth parameters, particularly V/III ratios and substrate orientations.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Lee, Bun

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1989 Lee, Bun

Language dc:language

eng

Identifier

AAI8924878
(UMI)AAI8924878

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21495