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University of Illinois at Urbana-Champaign

iSIM: Ultra-deep submicron MOSFET physical model for analog and low power digital circuits

Abstract

dc:description

Restriction data tranferred 2014-07-01T11:23:04-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2011

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Cho, Dae-Hyung
Contributors dc:contributor
  • Kang, Sung Mo

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • Copyright 1995 Cho, Dae-Hyung
Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
AAI9624311
(UMI)AAI9624311
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/21394

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Cho, Dae-Hyung. iSIM: Ultra-deep submicron MOSFET physical model for analog and low power digital circuits. Dissertation thesis, University of Illinois at Urbana-Champaign, 2011. http://hdl.handle.net/2142/21394