Spectroscopic characterization of dry etch-induced modification in III-V semiconductors and semiconductor heterostructures

The effects of dry etching on the structural and electrical properties of III-V semiconductors and semiconductor heterostructures were studied using vibrational and electronic Raman spectroscopy and low and room temperature photoluminescence spectroscopy. The frequency, intensity, and lineshape of the dipole-allowed and dipole-forbidden longitudinal optic (LO) phonon as well as the dipole-forbidden transverse optic phonon were used to evaluate structural modification in doped and undoped material. The intensities and frequencies of the coupled LO phonon-plasmon modes relative to those of the unscreened LO phonon were used to probe changes in the surface space charge region and free carrier concentration. Photoluminescence peak energies, intensity, and lineshape were used to evaluate crystal quality and defect identity.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemistry

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Maslar, James Edgar

Contributors dc:contributor

• Bohn, Paul W.

• Chemistry, Analytical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1994 Maslar, James Edgar

Language dc:language

eng

Identifier

AAI9416404
(UMI)AAI9416404

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21245