Thermal and low-energy ion doping of silicon(001) during molecular beam epitaxy: Dopant incorporation kinetics and mechanisms

Thermal and accelerated-ion doping, with In and Sb, during Si(001) molecular-beam epitaxy were investigated as a function of growth temperature T$\sb{\rm s}$ (500-1050$\sp\circ$C), dopant energy E$\sb{\rm d}$ (thermal-500 eV), and Si deposition rate R$\sb{\rm Si}$ (0.18-4.7 μm h$\sp{-1}).$ Surface segregation during thermal doping led to severe profile broadening and low temperature-dependent incorporation probabilities σ\sb{\rm d,th}. On the other hand, σ\sb{\rm d}+ for In-ions at energies E$\sb{\rm In}$+ $\ge$ 200 eV or Sb-ions accelerated by potentials V$\sb{\rm Sb}$+ $\ge$ 300 V was essentially unity up to T$\sb{\rm s}\sim850$-900$\sp\circ$C. At lower ion energies, σ\sb{\rm d}+ was temperature and energy dependent, but was still much higher than σ\sb{\rm d,th}. Abrupt tailored depth profiles were easily obtained by controlling the ion current; layers δ-doped with a 250 V Sb-ion beam were $\le$2 nm wide.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Markert, Lucia Chen

Contributors dc:contributor

• Greene, Joseph E.

• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1992 Markert, Lucia Chen

Language dc:language

eng

Identifier

AAI9236532
(UMI)AAI9236532

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21184