Design, fabrication, and characterization of low-dimensional quantum devices

The realization of a two-dimensional electron gas in semiconductor heterostructures due to advanced epitaxial growth techniques has led to novel high-speed devices such as modulation-doped field effect transistors and quantum well lasers. High resolution lithography and pattern transfer techniques now make it possible to further restrict the electronic motion to lower dimensions. A variety of interesting quantum confinement phenomena have been observed in these mesoscopic systems. This thesis describes the design principle, fabrication technique, and transport characterization of various low-dimensional quantum devices.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Chang, Hong

Contributors dc:contributor

• Adesida, Ilesanmi

• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1994 Chang, Hong

Language dc:language

eng

Identifier

AAI9503157
(UMI)AAI9503157

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21035