Structure and epitaxy studies of cobalt silicide/silicon heterostructures

Interfacial pinhole formation was identified at the CoSi/Si interface and involves several active mechanisms which include locally enhanced silicon and cobalt diffusion, silicide spike formation during CoSi thin film growth, and volumetric contractions during the CoSi $\to$ CoSi$\sb2$ phase transformation. Multilayer Si$\sb{\rm a}$/Co/Si$\sb{\rm c}$ thin film deposition is an effective processing technique for controlling microstructure and preventing pinhole formation by promoting uniform interfacial silicide growth. Epitaxial pinhole free CoSi$\sb2$ films were grown by single step annealing Si$\sb{\rm a}$/Co/Si$\sb{\rm c}$ multilayer structures. Two step annealing Si$\sb{\rm a}$/Co/Si$\sb{\rm c}$ multilayer thin films results in polycrystalline CoSi$\sb2$.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Zaluzec, Matthew John

Contributors dc:contributor

• Rigsbee, J. Michael

• Physics, Condensed Matter
• Engineering, Metallurgy
• Engineering, Materials Science

Statement dc:rights

• Copyright 1991 Zaluzec, Matthew John

Language dc:language

eng

Identifier

AAI9136778
(UMI)AAI9136778

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21033