Investigation of implantation damage in aluminum gallium arsenide/gallium arsenide heterostructures using ion channeling and transmission electron microscopy

The implantation damage behavior of GaAs/Al$\sb{0.6}$Ga$\sb{0.4}$As multilayer structures has been investigated by implanting samples with 1 MeV Kr$\sp+$, 1.5 MeV Kr$\sp+$, 1 MeV Ar$\sp+$, and 1.5 MeV Kr$\sp{++}$ at 77 K. The resulting damage state was analyzed using low-, room-, and high-temperature Rutherford backscattering spectrometry ion channeling and room-temperature transmission electron microscopy techniques. In all implantations the level of damage produced in these structures was found to increase with depth, and the damage state produced in samples containing single- and double-layers of $\rm Al\sb{0.6}Ga\sb{0.4}As$ was independent of the internal interfaces. The observed damage can be explained using a model which relates the amount of implantation-induced disorder to the number of cascade-producing events in a given region. This model can also account for results in the GaAs/AlAs system, such as the greater amount of mixing which is observed to occur at deeper AlAs interfaces and also that amorphization of AlAs layers initiates at the interfaces.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Turkot, Britt Anne

Contributors dc:contributor

• Robertson, Ian M.

• Engineering, Electronics and Electrical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Turkot, Britt Anne

Language dc:language

eng

Identifier

9780591089677
AAI9702693
(UMI)AAI9702693

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20847