Scanning tunneling microscopy of III-V semiconductors

Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the c(8x2) reconstruction and shows that the c(8x2) consists of ordered (4x2) subunits. Each (4x2) subunit contains two As and two Ga dimers, contrary to previous descriptions which include only Ga dimers. This model of the c(8x2) reconstruction also agrees well with results from other experimental techniques. The (2x6) reconstruction is observed to be considerably more complex than the c(8x2) and bears little resemblance to either the c(2x8) or c(8x2) reconstructions.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Skala, Stephen Lawrence

Contributors dc:contributor

• Lyding, Joseph W.

• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1994 Skala, Stephen Lawrence

Language dc:language

eng

Identifier

AAI9416435
(UMI)AAI9416435

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20570