Theoretical studies of electron dynamics and relaxation in photoexcited quantum well structures

The III-V compound semiconductor devices employing quantum well (QW) structures play an essential role in the field of optoelectronics. This thesis focuses on the quantum mechanical aspects of electron dynamics and relaxation (or capture) in QW structures with particular attention paid to understanding and interpreting the results from the various optical experiments performed on QW structures. First, the transfer matrix technique used to calculate the electronic properties of QW structures is described. Next, a general discussion of the electron-phonon interactions important for QW structures is made, stressing the role of confined polar optical phonons including the electron-phonon coupling for confined slab and interface phonons. In addition, optical deformation potential phonon-electron coupling pertaining to intervalley scattering is discussed. Then, a rate equation formulation for electron and phonon dynamics in QW systems is derived. Finally, a detailed discussion describing electron dynamics and relaxation in various QW structures begins with undoped QW structures. This development is followed by a discussion of electron capture in modulation-doped QW structures. Finally, intersubband transitions in asymmetric QW structures stressing the role of interface phonon modes is presented.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Educato, James Louis

Contributors dc:contributor

• Hess, Karl

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1993 Educato, James Louis

Language dc:language

eng

Identifier

AAI9411610
(UMI)AAI9411610

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20544