Spectroscopic characterization of the near-surface electronic structure of surface-modified III-V semiconductors

Investigations of the near-surface electronic structure of n$\sp+$-GaAs and n$\sp+$-InAs are presented. Recent studies of the GaAs surface have been carried out which demonstrate that the surface states which arise from termination of the crystal lattice, which are known to cause pinning of the Fermi energy level and an increase in the Schottky barrier in the semiconductor, can be passivated using inorganic sulfides. Although treatment with the inorganic sulfides is effective in reducing the surface recombination velocity, the loss of the surface As atoms during the treatment causes an electronic reorganization in the semiconductor which actually pins the Fermi level closer to the valence band and subsequently increases the band-bending at the surface. In this research, passivation with a long-chain alkane thiol demonstrates the ability to passivate the surface while unpinning the Fermi level and reducing the surface band-bending. This change is measured quantitatively by applying Raman spectroscopy is a probe of the near-surface region. The distinct electronic regions of the semiconductor surface can be differentiated by monitoring the predominant crystal vibrations from each region which give rise to Raman scattering.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemistry

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Dorsten, Jeffrey F.

Contributors dc:contributor

• Bohn, Paul W.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Dorsten, Jeffrey F.

Language dc:language

eng

Identifier

9780591087130
AAI9702503
(UMI)AAI9702503

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20298