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University of Illinois at Urbana-Champaign

Theoretical studies of high field electron transport in silicon devices

Abstract

dc:description

Restriction data tranferred 2014-07-01T11:18:11-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2011

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Higman, Jack Mason
Contributors dc:contributor
  • Hess, Karl

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • Copyright 1989 Higman, Jack Mason
Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
AAI8916262
(UMI)AAI8916262
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/20148

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Higman, Jack Mason. Theoretical studies of high field electron transport in silicon devices. Dissertation thesis, University of Illinois at Urbana-Champaign, 2011. http://hdl.handle.net/2142/20148