Resonant Raman scattering studies of III-V semiconductor microstructures

Raman spectroscopy, an inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As alloy work emphasizes electronic behavior, migration enhanced epitaxy (MEE) studies highlight structural results, and a phonon-assisted lasing project underscores electron-phonon interaction.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Delaney, Malcolm Emil

Contributors dc:contributor

• Klein, Miles V.

• Physics, Condensed Matter
• Physics, Optics

Statement dc:rights

• Copyright 1991 Delaney, Malcolm Emil

Language dc:language

eng

Identifier

AAI9136583
(UMI)AAI9136583

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19977