Modeling optically activated high power semiconductor switches

A two-dimensional time dependent computer model of a GaAs PCSS has been developed to investigate nonuniformities in the electric field observed in the operation of a high power photoconductive semiconductor switch. The model solves the continuity equations for electrons, holes, and traps, the energy equation for the lattice, Poisson's equation, and a circuit equation. Physical effects in the model include band-to-band impact ionization, trap impact ionization, photoionization, recombination radiation transport, and negative differential resistance. The model has the ability to address different switch geometries and the consequences of nonuniformities in carrier injection, permittivity, and illumination of the sample on switch operation.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Stout, Phillip J.

Contributors dc:contributor

• Kushner, Mark J.

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1995 Stout, Phillip J.

Language dc:language

eng

Identifier

AAI9543735
(UMI)AAI9543735

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19926