Heterogeneous decomposition of trimethylaluminum and trimethylgallium on silicon surfaces

Trimethylaluminum (TMAl) and trimethylgallium (TMGa) are important source gases for use in MOCVD and MOMBE. This study uses thermal desorption spectroscopy, x-ray photoelectron spectroscopy, and electron energy loss spectroscopy to examine the decomposition of TMAl at low coverages on heated silicon substrates. In addition, molecular beam methods are employed to investigate the decomposition of TMGa directly on a heated surface at higher TMGa exposures. The decomposition mechanisms are identified through characterization of the intermediate species produced during decomposition. Carbon deposition is found to be an intrinsic part of the decomposition of TMAl and TMGa on silicon under the conditions used in this work.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical and Biomolecular Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Gow, Thomas Richard, Jr

Contributors dc:contributor

• Masel, Richard I.

• Engineering, Chemical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1990 Gow, Thomas Richard, Jr

Language dc:language

eng

Identifier

AAI9114248
(UMI)AAI9114248

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19884