Low energy ion beam modification of the titanium silicide (100) reaction

This research investigated the effects of the ion beam assisted deposition process on the interdiffusion and reaction of Ti thin films deposited on Si (100). The analytical techniques employed for the characterization of these thin films included transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, Auger electron spectroscopy, x-ray energy dispersive spectroscopy, and x-ray diffraction. The ion assisted deposition parameters which were investigated in this study include: ion energy, ion flux, ion to depositing atom ratio, evaporant atom flux, deposition time, average energy of bombardment per depositing atom, and substrate temperature.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Scott, Philip Arthur

Contributors dc:contributor

• Rigsbee, J. Michael

• Engineering, Metallurgy

Statement dc:rights

• Copyright 1992 Scott, Philip Arthur

Language dc:language

eng

Identifier

AAI9236590
(UMI)AAI9236590

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19851