Theoretical investigations of reduced size effects in gallium-arsenide and heterostructure electron devices

In this thesis physical effects due to the reduced size of semiconductor devices are investigated theoretically. Effects due to statistical fluctuations and boundary conditions at heterointerfaces are examined, specifically, electron transport models are developed for the effects of impurity fluctuations, contacts, and heterostructure barriers. The investigations are carried out for the GaAs - Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As material system.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Arnold, Douglas James

Contributors dc:contributor

• Hess, Karl

• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1989 Arnold, Douglas James

Language dc:language

eng

Identifier

AAI8916211
(UMI)AAI8916211

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19528