Theoretical studies of the optoelectronic properties of semiconductor quantum wells

The valence-band structure of a semiconductor quantum well is calculated based on the multiband effective-mass theory. A unitary transformation is found to diagonalize the six-by-six Luttinger-Kohn Hamiltonian into two three-by-three blocks, making the computation more efficient. With this new formulation, the effect of strain on the band structure is studied systematically for both the compressional and tensile strain. The importance of the coupling between the heavy-hole, light-hole bands and the spin-orbit split-off bands is especially pointed out.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Chao, Calvin Yi-Ping

Contributors dc:contributor

• Chuang, Shun-Lien

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1992 Chao, Calvin Yi-Ping

Language dc:language

eng

Identifier

AAI9236417
(UMI)AAI9236417

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19093