Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide

"Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique remains inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system is installed along with a tunable dye laser, which provides resonant excitation. Donors in high purity GaAs are identified from the magnetic splittings of ""two-electron"" satellites of donor bound exciton transitions in a high magnetic field and at liquid helium temperature. This technique is successfully used to identify donors in n-type GaAs as well as in p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP."

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Bose, Sabya Sachi

Contributors dc:contributor

• Stillman, Gregory E.

• Electrical Engineering
• Condensed Matter Physics
• Materials Science Engineering

Statement dc:rights

• Copyright 1989 Bose, Sabya Sachi

Language dc:language

eng

Identifier

AAI8924774
(UMI)AAI8924774

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19028