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University of Illinois at Urbana-Champaign

Impurity-induced layer disordering and hydrogenation in the indium aluminum gallium phosphide material system: Visible spectrum semiconductor lasers

Abstract

dc:description

The development of visible-spectrum semiconductor lasers is of immense economic and practical importance. Because of the extremely high efficiency of semiconductor lasers, coherent visible light sources can be made with extremely low power requirements. Applications for such sources include high-density optical storage units and optical communications. Additionally, the use of multiple-stripe arrays makes high-power ($\gg$200 mW per facet) coherent semiconductor light sources a possibility.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2011

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Dallesasse, John Michael
Contributors dc:contributor
  • Holonyak, Nick, Jr.

Subjects

dc:subject × 3

Rights

dc:rights
Statement dc:rights
  • Copyright 1991 Dallesasse, John Michael
Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
AAI9124402
(UMI)AAI9124402
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/18957

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Dallesasse, John Michael. Impurity-induced layer disordering and hydrogenation in the indium aluminum gallium phosphide material system: Visible spectrum semiconductor lasers. Dissertation thesis, University of Illinois at Urbana-Champaign, 2011. http://hdl.handle.net/2142/18957