Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation

In this thesis, we explore the performance characteristics, speci cally the drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top and bottom gates. An interesting result is obtained in the misalignment analysis, according to which overlap with source increases the drain current, even in the presence of drain underlap. Misalignment can be tolerable in devices up to a certain extent depending on the application. High- dielectrics and small oxide thickness are shown to improve the current drive. Comparison is made between quantum-corrected and classical simulation results. Change in potential and concentration pro les in the quantum-corrected simulation is the result of coupling between the Schr odinger and the Poisson equations. The drain current increase compared to a conventional MOSFET of the same dimensions and materials is shown to be signi cant. Main features of the full band quantum-corrected Monte Carlo simulator are delineated and its signi cance at the mesoscopic scale is discussed. Finally recent research on electrothermal analysis is reviewed and its importance in relation to the current work is explained. An outline of possible future work is presented for both the simulator and the device.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2010

Author dc:creator

• Ismail, Fawad H.

Contributors dc:contributor

• Ravaioli, Umberto

• performance
• drain current
• double gate
• mosfet
• monte carlo
• modeling
• simulation
• theoretical
• misalignment
• quantum correction
• schrodinger equation
• gate oxide
• dielectric constant
• short channel effects
• boltzmann transport equation
• band structure
• finite difference
• volume inversion
• high-K
• thermal analysis
• phonons

Statement dc:rights

• Copyright 2009 Fawad Hassan Ismail

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/14639

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/14639