Impurity-induced disordering of vertical-cavity surface-emitting lasers: Applications to polarization control and high-speed modulation

Impurity-induced disordering (IID) of vertical-cavity surface-emitting lasers (VCSELs) as a platform technology enables mode engineering through the precise introduction of mirror loss while simultaneously improving top distributed Bragg reflector (DBR) conductivity. Strain-engineering of the diffusion masks used in IID processing impacts characteristics of the aspect ratio of the disordering diffusant and enables high-power single-mode emission. The modulation response and applicability of this platform to the goal of polarization control in 850 nm gallium arsenide-based oxide-confined VCSELs are investigated. An analysis of the high-frequency damping factors of IID VCSELs given varying disordering depths is provided. The experimental design and fabrication process for polarization controlled VCSELs using elliptical strain-engineered disorder-defined apertures is discussed, and measured polarization characteristics are analyzed as a function of strained diffusion mask ellipticity. The orthogonal polarization suppression ratios (OPSRs) of VCSELs using circular disorder-defined apertures under strain-engineered diffusion mask variants are discussed.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2022

Author dc:creator

• Kraman, Mark D.

Contributors dc:contributor

• Dallesasse, John M

• vertical-cavity surface-emitting laser
• impurity-induced disordering
• single-mode
• high-speed modulation
• polarization

Statement dc:rights

• © 2022 Mark D. Kraman

Language dc:language

en, eng

Handle dc:identifier

https://hdl.handle.net/2142/115418

OAI record oai:identifier

https://www.ideals.illinois.edu/oai-pmh?verb=GetRecord&metadataPrefix=etdms&identifier=oai%3Awww.ideals.illinois.edu%3A2142%2F115418