Reliability and Lifetime Assessment and Enhancement of SIC MOSFETs in an H-ANPC Inverter

This thesis investigates the lifetime and reliability assessment of power semiconductor devices to address the growing demand for efficient and reliable power converters. Accurate evaluation requires replicating real-world stress conditions, achieved through various Accelerated Tests (ATs). A Hybrid Active Neutral Point Clamped (H-ANPC) inverter, integrating Si IGBTs and SiC MOSFETs, is selected to develop lifetime models and strategies for reliability enhancement. The study begins with a Power Cycling Test (PCT) and introduces an Inverter-like Accelerated Test (IAT) to more effectively emulate inverter operating conditions. Comparative analysis shows that IAT better captures switching-related degradation and improves lifetime prediction accuracy. Building on these insights, an Active Gate Voltage Control Scheme (AGVCS) and an Active Gate Driver (AGD) are developed to enhance reliability and extend the operational lifetime of SiC MOSFETs. Experimental validation confirms that integrating AGVCS with the proposed reliability framework improves inverter robustness. The work concludes by emphasizing the potential of AGVCS and advanced testing methodologies in improving SiC MOSFET reliability and guiding future reliability-oriented inverter designs.

Author dc:creator

• Mohammad Ali Abbaszada (24399956)

• Engineering
• Electronics and Electrical

Statement dc:rights

• In Copyright
• Open Access after 2028-05-01

DOI dc:identifier

https://doi.org/10.25417/uic.32994950.v1

OAI identifier oai:identifier

oai:figshare.com:article/32994950