Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques.

As the innovation of the semiconductor industry proceeds the semiconductor heterojunction is playing an increasingly important part. One such heterojunction, the silicon/gallium phosphide crystal, however, is still in early stages of investigation. If gallium phosphide epitaxial layers can he grown on to silicon substrates then, due to the small cost of the silicon substrates and the electroluminescent properties of the gallium phosphide layer, low cost L E D's could be produced. The gallium phosphide display and the silicon display driver could also be incorporated on the one chip. With the reduction in mechanical bonds and the elimination of seperate packaging, resulting, the reliability of these devices would be improved, while the cost would drop. This project therefore sets out to investigate the growth of the silicon/gallium phosphide heterojunction. The fabrication methods chosen are liquid and vapour phase epitaxy. These methods are executed using a vertical furnace system and the advantages and disadvantages encountered are discussed.

Name dc:type.qualificationname

PhD

Level dc:type.qualificationlevel

Doctoral

Grantor dc:publisher.institution

Robert Gordon's Institute of Technology

Year dc:date.issued

1977

Author dc:creator

• Lamb, Robert G.

Advisor dc:contributor.advisor

• T.E Price

• Semiconductor
• Heterojunction
• Gilicon
• Gallium phosphide
• Epitaxial layers
• Fabrication methods
• Epitaxy
• Reliability

Language dc:language

en

Identifier

oai:rgu-repository.worktribe.com:1993266
https://doi.org/10.48526/rgu-wt-1993266

OAI identifier oai:identifier

oai:rgu-repository.worktribe.com:1993266