{"id":{"repo_id":"rgu","oai_identifier":"oai:rgu-repository.worktribe.com:1993266"},"canonical_url":"https://search.dev.ndltd.org/etd/rgu/oai:rgu-repository.worktribe.com:1993266","repository":{"repo_id":"rgu","name":"Robert Gordon University","base_url":"https://rgu-repository.worktribe.com/oaiprovider"},"display":{"title":"Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques.","abstract":"As the innovation of the semiconductor industry proceeds the semiconductor heterojunction is playing an increasingly important part. One such heterojunction, the silicon/gallium phosphide crystal, however, is still in early stages of investigation. If gallium phosphide epitaxial layers can he grown on to silicon substrates then, due to the small cost of the silicon substrates and the electroluminescent properties of the gallium phosphide layer, low cost L E D's could be produced. The gallium phosphide display and the silicon display driver could also be incorporated on the one chip. With the reduction in mechanical bonds and the elimination of seperate packaging, resulting, the reliability of these devices would be improved, while the cost would drop. This project therefore sets out to investigate the growth of the silicon/gallium phosphide heterojunction. The fabrication methods chosen are liquid and vapour phase epitaxy. These methods are executed using a vertical furnace system and the advantages and disadvantages encountered are discussed.","abstract_html":"As the innovation of the semiconductor industry proceeds the semiconductor heterojunction is playing an increasingly important part. One such heterojunction, the silicon/gallium phosphide crystal, however, is still in early stages of investigation. If gallium phosphide epitaxial layers can he grown on to silicon substrates then, due to the small cost of the silicon substrates and the electroluminescent properties of the gallium phosphide layer, low cost L E D's could be produced. The gallium phosphide display and the silicon display driver could also be incorporated on the one chip. With the reduction in mechanical bonds and the elimination of seperate packaging, resulting, the reliability of these devices would be improved, while the cost would drop. This project therefore sets out to investigate the growth of the silicon/gallium phosphide heterojunction. The fabrication methods chosen are liquid and vapour phase epitaxy. These methods are executed using a vertical furnace system and the advantages and disadvantages encountered are discussed.","abstract_has_math":false,"creators":["Lamb, Robert G."],"institution":"Robert Gordon's Institute of Technology","degree_name":"PhD","degree_level":"Doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":["T.E Price"],"committee_chairs":[],"committee_members":[],"year":1977,"date_issued":"1977","date_published":"1977","updated_at":"2026-07-24T04:10:06Z","subjects":["Semiconductor","Heterojunction","Gilicon","Gallium phosphide","Epitaxial layers","Fabrication methods","Epitaxy","Reliability"],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["oai:rgu-repository.worktribe.com:1993266","https://doi.org/10.48526/rgu-wt-1993266"],"render_values":[{"text":"oai:rgu-repository.worktribe.com:1993266","href":null,"code":true},{"text":"https://doi.org/10.48526/rgu-wt-1993266","href":"https://doi.org/10.48526/rgu-wt-1993266","code":true}]}]},"links":{"outbound_url":"https://rgu-repository.worktribe.com/1993266/1/LAMB%201977%20Growth%20of%20a%20silicon-gallium","outbound_label":"Repository record","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["T.E Price"]},{"key":"dc:contributor.sponsor","label":"Sponsor","values":["No Funder Acknowledged (Outputs)"]},{"key":"dc:creator","label":"Author","values":["Lamb, Robert G."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["1977-02-28"]},{"key":"dc:date.issued","label":"Date","values":["1977"]},{"key":"dc:publisher.institution","label":"Dc Publisher Institution","values":["Robert Gordon's Institute of Technology"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["https://rgu-repository.worktribe.com/output/1993266"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.qualificationlevel","label":"Dc Type Qualificationlevel","values":["Doctoral"]},{"key":"dc:type.qualificationname","label":"Dc Type Qualificationname","values":["PhD"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Semiconductor","Heterojunction","Gilicon","Gallium phosphide","Epitaxial layers","Fabrication methods","Epitaxy","Reliability"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["oai:rgu-repository.worktribe.com:1993266","https://doi.org/10.48526/rgu-wt-1993266"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://rgu-repository.worktribe.com/1993266/1/LAMB%201977%20Growth%20of%20a%20silicon-gallium"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["As the innovation of the semiconductor industry proceeds the semiconductor heterojunction is playing an increasingly important part. One such heterojunction, the silicon/gallium phosphide crystal, however, is still in early stages of investigation. If gallium phosphide epitaxial layers can he grown on to silicon substrates then, due to the small cost of the silicon substrates and the electroluminescent properties of the gallium phosphide layer, low cost L E D's could be produced. The gallium phosphide display and the silicon display driver could also be incorporated on the one chip. With the reduction in mechanical bonds and the elimination of seperate packaging, resulting, the reliability of these devices would be improved, while the cost would drop. This project therefore sets out to investigate the growth of the silicon/gallium phosphide heterojunction. The fabrication methods chosen are liquid and vapour phase epitaxy. These methods are executed using a vertical furnace system and the advantages and disadvantages encountered are discussed."]},{"key":"dc:title","label":"Title","values":["Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques."]}]}],"canonical_facts":{"dc:contributor.advisor":["T.E Price"],"dc:contributor.sponsor":["No Funder Acknowledged (Outputs)"],"dc:creator":["Lamb, Robert G."],"dc:date":["1977-02-28"],"dc:date.issued":["1977"],"dc:description.abstract":["As the innovation of the semiconductor industry proceeds the semiconductor heterojunction is playing an increasingly important part. One such heterojunction, the silicon/gallium phosphide crystal, however, is still in early stages of investigation. If gallium phosphide epitaxial layers can he grown on to silicon substrates then, due to the small cost of the silicon substrates and the electroluminescent properties of the gallium phosphide layer, low cost L E D's could be produced. The gallium phosphide display and the silicon display driver could also be incorporated on the one chip. With the reduction in mechanical bonds and the elimination of seperate packaging, resulting, the reliability of these devices would be improved, while the cost would drop. This project therefore sets out to investigate the growth of the silicon/gallium phosphide heterojunction. The fabrication methods chosen are liquid and vapour phase epitaxy. These methods are executed using a vertical furnace system and the advantages and disadvantages encountered are discussed."],"dc:identifier":["oai:rgu-repository.worktribe.com:1993266","https://doi.org/10.48526/rgu-wt-1993266"],"dc:identifier.uri":["https://rgu-repository.worktribe.com/1993266/1/LAMB%201977%20Growth%20of%20a%20silicon-gallium"],"dc:language":["en"],"dc:publisher.institution":["Robert Gordon's Institute of Technology"],"dc:relation.isreferencedby":["https://rgu-repository.worktribe.com/output/1993266"],"dc:subject":["Semiconductor","Heterojunction","Gilicon","Gallium phosphide","Epitaxial layers","Fabrication methods","Epitaxy","Reliability"],"dc:title":["Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques."],"dc:type":["Thesis"],"dc:type.qualificationlevel":["Doctoral"],"dc:type.qualificationname":["PhD"]},"updated_at":"2026-07-24T04:10:06Z"}