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Technische Universität Dresden

Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases

Abstract

dc:description.abstract

The history of silicon technology showed that controlled doping was a key step for the realization of e®ective, stable and reproducible devices. When the conduction type was no longer determined by impurities but could be controlled by doping, the breakthrough of classical microelectronics became possible. Unlike inorganic semiconductors, organic dyes are up to now usually prepared in a nominally undoped form. However, controlled and stable doping is desirable in many organic-based devices as well. If we succeed in shifting the Fermi level towards the transport states, this could reduce ohmic losses, ease carrier injection from contacts and increase the built-in potential of Schottky- or pn-junctions.

Degree

thesis:*
Level thesis:degree_level
thesis.doctoral
Grantor dc:publisher
Technische Universität Dresden
Year
2005

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Li, Fenghong
Contributors dc:contributor
  • Leo, Karl
  • Salbeck, Josef
  • Hartmann, Horst

Subjects

dc:subject × 5

Chain of custody

source
Harvested from
QUCOSA
Base URL
www.qucosa.de/oai/
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

Li, Fenghong. Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases. thesis.doctoral thesis, Technische Universität Dresden, 2005.