{"id":{"repo_id":"qucosa-diss","oai_identifier":"oai:qucosa:de:qucosa:24487"},"canonical_url":"https://search.dev.ndltd.org/etd/qucosa-diss/oai:qucosa:de:qucosa:24487","repository":{"repo_id":"qucosa-diss","name":"QUCOSA","base_url":"http://www.qucosa.de/oai/"},"display":{"title":"Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases","abstract":"The history of silicon technology showed that controlled doping was a key step for the realization of e®ective, stable and reproducible devices. When the conduction type was no longer determined by impurities but could be controlled by doping, the breakthrough of classical microelectronics became possible. Unlike inorganic semiconductors, organic dyes are up to now usually prepared in a nominally undoped form. However, controlled and stable doping is desirable in many organic-based devices as well. If we succeed in shifting the Fermi level towards the transport states, this could reduce ohmic losses, ease carrier injection from contacts and increase the built-in potential of Schottky- or pn-junctions.","abstract_html":"The history of silicon technology showed that controlled doping was a key step for the realization of e®ective, stable and reproducible devices. When the conduction type was no longer determined by impurities but could be controlled by doping, the breakthrough of classical microelectronics became possible. Unlike inorganic semiconductors, organic dyes are up to now usually prepared in a nominally undoped form. However, controlled and stable doping is desirable in many organic-based devices as well. If we succeed in shifting the Fermi level towards the transport states, this could reduce ohmic losses, ease carrier injection from contacts and increase the built-in potential of Schottky- or pn-junctions.","abstract_has_math":false,"creators":["Li, Fenghong"],"institution":"Technische Universität Dresden","degree_name":null,"degree_level":"thesis.doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":["Leo, Karl","Salbeck, Josef","Hartmann, Horst"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2005,"date_issued":"2005-04-28","date_published":"2005-04-28","updated_at":"2026-07-24T03:58:02Z","subjects":["Elektronentransportmaterialien","kationische Färbungen","n-type doping","cationic dyes","electron transport materials"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Leo, Karl","Salbeck, Josef","Hartmann, Horst"]},{"key":"dc:creator","label":"Author","values":["Li, Fenghong"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden","Technische Universität Dresden"]},{"key":"dc:type","label":"Dc Type","values":["doctoralThesis"]},{"key":"thesis:degree_level","label":"Degree Level","values":["thesis.doctoral"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Technische Universität Dresden"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Elektronentransportmaterialien","kationische Färbungen","n-type doping","cationic dyes","electron transport materials"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The history of silicon technology showed that controlled doping was a key step for the realization of e®ective, stable and reproducible devices. When the conduction type was no longer determined by impurities but could be controlled by doping, the breakthrough of classical microelectronics became possible. Unlike inorganic semiconductors, organic dyes are up to now usually prepared in a nominally undoped form. However, controlled and stable doping is desirable in many organic-based devices as well. If we succeed in shifting the Fermi level towards the transport states, this could reduce ohmic losses, ease carrier injection from contacts and increase the built-in potential of Schottky- or pn-junctions."]},{"key":"dc:title","label":"Title","values":["Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases"]}]}],"canonical_facts":{"dc:contributor":["Leo, Karl","Salbeck, Josef","Hartmann, Horst"],"dc:creator":["Li, Fenghong"],"dc:description.abstract":["The history of silicon technology showed that controlled doping was a key step for the realization of e®ective, stable and reproducible devices. When the conduction type was no longer determined by impurities but could be controlled by doping, the breakthrough of classical microelectronics became possible. Unlike inorganic semiconductors, organic dyes are up to now usually prepared in a nominally undoped form. However, controlled and stable doping is desirable in many organic-based devices as well. If we succeed in shifting the Fermi level towards the transport states, this could reduce ohmic losses, ease carrier injection from contacts and increase the built-in potential of Schottky- or pn-junctions."],"dc:publisher":["Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden","Technische Universität Dresden"],"dc:subject":["Elektronentransportmaterialien","kationische Färbungen","n-type doping","cationic dyes","electron transport materials"],"dc:title":["Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases"],"dc:type":["doctoralThesis"],"thesis:degree_level":["thesis.doctoral"],"thesis:institution_name":["Technische Universität Dresden"]},"updated_at":"2026-07-24T03:58:02Z"}