CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES

In this thesis the characteristics of five bulk semi-insulated doped gallium nitride samples provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on sapphire substrates by hydride vapor phase epitaxy (HVPE) and doped with different concentrations of iron, hydrogen, carbon, oxygen and silicon. The first step of characterization was measuring the optical absorption of all the samples using a UV-NIR fiber spectrometer. Through this procedure it was found that they all showed a strong absorption at 518 nm. Thus, time-resolved differential transmission measurements were conducted at this wavelength using the second harmonic generation (SHG) of a femtosecond ytterbium-doped fiber amplifier (YDFA), mode-locked laser. Relaxation times between 24 and 433 picoseconds were obtained. Finally, four point probe measurements were performed in the order to determine the bulk resistivity of the GaN samples. The measured values are within the order of 10^6 ¿¿*m for all samples.

Name thesis:degree_name

Master of Science in Engineering (MSEgr)

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Electrical Engineering

Grantor dc:publisher

Wright State University

Year dc:date

2012

Author dc:creator

• Owsley, Jack Lee, III

Contributors dc:contributor

• Brown, Elliott

• Electrical Engineering

Statement dc:rights

• unrestricted
• This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

Language dc:language

English

Repository record dc:identifier

http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392

OAI identifier oai:identifier

oai:etd.ohiolink.edu:wright1357763392