{"id":{"repo_id":"ohiolink","oai_identifier":"oai:etd.ohiolink.edu:wright1357763392"},"canonical_url":"https://search.dev.ndltd.org/etd/ohiolink/oai:etd.ohiolink.edu:wright1357763392","repository":{"repo_id":"ohiolink","name":"OhioLINK","base_url":"https://etd.ohiolink.edu/acprod/odb_etd/ws/oai/oai"},"display":{"title":"CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES","abstract":"In this thesis the characteristics of five bulk semi-insulated doped gallium nitride samples provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on sapphire substrates by hydride vapor phase epitaxy (HVPE) and doped with different concentrations of iron, hydrogen, carbon, oxygen and silicon. The first step of characterization was measuring the optical absorption of all the samples using a UV-NIR fiber spectrometer. Through this procedure it was found that they all showed a strong absorption at 518 nm. Thus, time-resolved differential transmission measurements were conducted at this wavelength using the second harmonic generation (SHG) of a femtosecond ytterbium-doped fiber amplifier (YDFA), mode-locked laser. Relaxation times between 24 and 433 picoseconds were obtained. Finally, four point probe measurements were performed in the order to determine the bulk resistivity of the GaN samples. The measured values are within the order of 10^6 ¿¿*m for all samples.","abstract_html":"In this thesis the characteristics of five bulk semi-insulated doped gallium nitride samples provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on sapphire substrates by hydride vapor phase epitaxy (HVPE) and doped with different concentrations of iron, hydrogen, carbon, oxygen and silicon. The first step of characterization was measuring the optical absorption of all the samples using a UV-NIR fiber spectrometer. Through this procedure it was found that they all showed a strong absorption at 518 nm. Thus, time-resolved differential transmission measurements were conducted at this wavelength using the second harmonic generation (SHG) of a femtosecond ytterbium-doped fiber amplifier (YDFA), mode-locked laser. Relaxation times between 24 and 433 picoseconds were obtained. Finally, four point probe measurements were performed in the order to determine the bulk resistivity of the GaN samples. The measured values are within the order of 10^6 ¿¿*m for all samples.","abstract_has_math":false,"creators":["Owsley, Jack Lee, III"],"institution":"Wright State University","degree_name":"Master of Science in Engineering (MSEgr)","degree_level":"masters","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Brown, Elliott"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012","date_published":"2012","updated_at":"2026-07-24T03:36:39Z","subjects":["Electrical Engineering"],"languages":["English"],"rights":["unrestricted","This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Brown, Elliott"]},{"key":"dc:creator","label":"Author","values":["Owsley, Jack Lee, III"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012"]},{"key":"dc:publisher","label":"Institution","values":["Wright State University / OhioLINK"]},{"key":"dc:type","label":"Dc Type","values":["Electronic Thesis or Dissertation"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Engineering (MSEgr)"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Wright State University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:rights","label":"Dc Rights","values":["unrestricted","This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis the characteristics of five bulk semi-insulated doped gallium nitride samples provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on sapphire substrates by hydride vapor phase epitaxy (HVPE) and doped with different concentrations of iron, hydrogen, carbon, oxygen and silicon. The first step of characterization was measuring the optical absorption of all the samples using a UV-NIR fiber spectrometer. Through this procedure it was found that they all showed a strong absorption at 518 nm. Thus, time-resolved differential transmission measurements were conducted at this wavelength using the second harmonic generation (SHG) of a femtosecond ytterbium-doped fiber amplifier (YDFA), mode-locked laser. Relaxation times between 24 and 433 picoseconds were obtained. Finally, four point probe measurements were performed in the order to determine the bulk resistivity of the GaN samples. The measured values are within the order of 10^6 ¿¿*m for all samples."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf","p.51","5.07 MB"]},{"key":"dc:title","label":"Title","values":["CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES"]}]}],"canonical_facts":{"dc:contributor":["Brown, Elliott"],"dc:creator":["Owsley, Jack Lee, III"],"dc:date":["2012"],"dc:description":["In this thesis the characteristics of five bulk semi-insulated doped gallium nitride samples provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on sapphire substrates by hydride vapor phase epitaxy (HVPE) and doped with different concentrations of iron, hydrogen, carbon, oxygen and silicon. The first step of characterization was measuring the optical absorption of all the samples using a UV-NIR fiber spectrometer. Through this procedure it was found that they all showed a strong absorption at 518 nm. Thus, time-resolved differential transmission measurements were conducted at this wavelength using the second harmonic generation (SHG) of a femtosecond ytterbium-doped fiber amplifier (YDFA), mode-locked laser. Relaxation times between 24 and 433 picoseconds were obtained. Finally, four point probe measurements were performed in the order to determine the bulk resistivity of the GaN samples. The measured values are within the order of 10^6 ¿¿*m for all samples."],"dc:format":["application/pdf","p.51","5.07 MB"],"dc:identifier":["http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392"],"dc:language":["English"],"dc:publisher":["Wright State University / OhioLINK"],"dc:rights":["unrestricted","This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws."],"dc:subject":["Electrical Engineering"],"dc:title":["CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES"],"dc:type":["Electronic Thesis or Dissertation"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science in Engineering (MSEgr)"],"thesis:institution_name":["Wright State University"]},"updated_at":"2026-07-24T03:36:39Z"}