Emissivity of patterned silicon wafers in rapid thermal processing

The influence of patterns on emissivity in silicon wafers in rapid thermal processing systems has been investigated. In this study, two experiments with layered and patterned silicon wafers were conducted. The main difference in the experiments is the way in which the temperature was controlled. The first experiment was performed under Open Loop Intensity Control (OLIC). For OLIC, no feedback from the wafer is returned. It is assumed that supplying a certain power level will lead to the desired temperature. The other experiment used the Closed Loop Intensity Control. In this case, a feedback, in the form of temperature deviation is used to adjust the temperature. By using the Stefan-Boltzmann T^4-law, a heat balance equation describing the incoming and outgoing heat can be derived. This heat balance equation can be used to calculate the spatial temperature differences due to different emissivities of the various thin film layers of patterned wafers. A mathematical model was developed based on the heat balance equation. The mathematical model was verified with experiments. The model showed good agreement with the experiments.

Name thesis:degree_name

Master of Science in Applied Physics - (M.S.)

Discipline thesis:degree_discipline

Federated Physics Department

Year

2005

Author dc:creator

• Rabus, Markus

Contributors dc:contributor

• Anthony Fiory
• N. M. Ravindra
• Dentcho V. Ivanov

• Emissivity
• Silicon wafers
• rapid thermal processing systems
• Other Physics

Repository record dc:identifier

https://digitalcommons.njit.edu/theses/506

OAI identifier oai:identifier

oai:digitalcommons.njit.edu:theses-1505