Abstract
dc:description.abstractThe formation of low resistance metal contacts on two-Dimensional layer (2-D) of WSe2 is a big challenge. In this research, a comparative study is presented on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, the device capacitance, and its current-voltage (I-V) characteristics. I-V curves for different metals on WSe2 are analyzed as function of temperature. Barrier height is determined from Au-nWSe2 Schottky barrier diode. This study provides a theoretical background for the selection of favourable metals on monolayer WSe_2.
Degree
thesis:*- Name thesis:degree_name
- Master of Science in Materials Science and Engineering - (M.S.)
- Discipline thesis:degree_discipline
- Committee for the Interdisciplinary Program in Materials Science and Engineering
- Year
- 2017
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Gandhi, Zeel Rajiv
- Contributors dc:contributor
-
- N. M. Ravindra
- Michael Jaffe
- Oktay H. Gokce
Subjects
dc:subject × 3Identifiers
dc:identifier.*- Repository record dc:identifier
- https://digitalcommons.njit.edu/theses/44
- OAI identifier oai:identifier
- oai:digitalcommons.njit.edu:theses-1043