{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1043"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1043","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Electrical properties of metal/wse2structures","abstract":"The formation of low resistance metal contacts on two-Dimensional layer (2-D) of WSe2 is a big challenge. In this research, a comparative study is presented on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, the device capacitance, and its current-voltage (I-V) characteristics. I-V curves for different metals on WSe2 are analyzed as function of temperature. Barrier height is determined from Au-nWSe2 Schottky barrier diode. This study provides a theoretical background for the selection of favourable metals on monolayer WSe_2.","abstract_html":"The formation of low resistance metal contacts on two-Dimensional layer (2-D) of WSe2 is a big challenge. In this research, a comparative study is presented on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, the device capacitance, and its current-voltage (I-V) characteristics. I-V curves for different metals on WSe2 are analyzed as function of temperature. Barrier height is determined from Au-nWSe2 Schottky barrier diode. This study provides a theoretical background for the selection of favourable metals on monolayer WSe_2.","abstract_has_math":false,"creators":["Gandhi, Zeel Rajiv"],"institution":null,"degree_name":"Master of Science in Materials Science and Engineering - (M.S.)","degree_level":null,"degree_discipline":"Committee for the Interdisciplinary Program in Materials Science and Engineering","degree_department":null,"school":null,"contributors":["N. M. Ravindra","Michael Jaffe","Oktay H. Gokce"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-12-31T08:00:00Z","date_published":"2017-12-31T08:00:00Z","updated_at":"2026-07-24T03:22:07Z","subjects":["Tungsten diselenide","Tungsten diselenide properties","Materials Science and Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/44","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["N. M. Ravindra","Michael Jaffe","Oktay H. 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In this research, a comparative study is presented on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, the device capacitance, and its current-voltage (I-V) characteristics. I-V curves for different metals on WSe2 are analyzed as function of temperature. Barrier height is determined from Au-nWSe2 Schottky barrier diode. This study provides a theoretical background for the selection of favourable metals on monolayer WSe_2."]},{"key":"dc:title","label":"Title","values":["Electrical properties of metal/wse2structures"]}]}],"canonical_facts":{"dc:contributor":["N. M. Ravindra","Michael Jaffe","Oktay H. Gokce"],"dc:creator":["Gandhi, Zeel Rajiv"],"dc:description.abstract":["The formation of low resistance metal contacts on two-Dimensional layer (2-D) of WSe2 is a big challenge. In this research, a comparative study is presented on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, the device capacitance, and its current-voltage (I-V) characteristics. I-V curves for different metals on WSe2 are analyzed as function of temperature. Barrier height is determined from Au-nWSe2 Schottky barrier diode. This study provides a theoretical background for the selection of favourable metals on monolayer WSe_2."],"dc:identifier":["https://digitalcommons.njit.edu/theses/44"],"dc:subject":["Tungsten diselenide","Tungsten diselenide properties","Materials Science and Engineering"],"dc:title":["Electrical properties of metal/wse2structures"],"dc:type":["Thesis"],"thesis:degree_discipline":["Committee for the Interdisciplinary Program in Materials Science and Engineering"],"thesis:degree_name":["Master of Science in Materials Science and Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:22:07Z"}