Heat transfer in silicon - experiments and simulation

The purpose of this thesis is to study the heat transfer in silicon. Silicon is the key semiconductor material, and thermal processing is the traditional method that is used in semiconductor processing. In this research, we can predict the temperature of the silicon wafer during heating. This ability to predict wafer temperature during semiconductor processing will facilitate in the following: (a) Process temperature uniformity, (b) Film thickness uniformity, (c) Diffusion, (d) Process yield, (e) Thermally induced stresses, and (f) Device yield - spatially and temporally across the wafer. For low temperature applications, IC chips can be modeled to simulate the heat flow. Therefore, the status of the chip while heating can be studied to understand the influence of the heating process on the performance of the chips, which is useful in the assessment of device performance and reliability. The research, in this thesis, utilizes a traditional hot plate as the source of heating of the silicon wafer. The modeling of heating of the wafer is based on ANSYS CFX software, a software tool that permits to solve fluid flow problems. The model considers heat conduction in silicon wafer, heat convection in air, and heat radiation. The influence of silicon wafer thickness and diameter on the wafer temperature distribution is simulated.

Name thesis:degree_name

Master of Science in Materials Science and Engineering - (M.S.)

Discipline thesis:degree_discipline

Committee for the Interdisciplinary Program in Materials Science and Engineering

Year

2017

Author dc:creator

• Huang, Chihlin

Contributors dc:contributor

• N. M. Ravindra
• Michael Jaffe
• Eon Soo Lee

• Heat transfer
• Silicon wafers
• Semiconductor processing
• Materials Science and Engineering

Repository record dc:identifier

https://digitalcommons.njit.edu/theses/3

OAI identifier oai:identifier

oai:digitalcommons.njit.edu:theses-1002