Resistance switching of electrodeposited cuprous oxide

<p>In this work, the resistance switching behavior of electrodeposited cuprous oxide (Cu₂O) thin films in Au/Cu₂O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial FORMING process, the fabricated cells show reversible switching between a low resistance state (16.6 Ω) and a high resistance state (0.4 x 10⁶ Ω). Changing the resistance states in cuprous oxide films depends on the magnitude of the applied voltage which corresponds to unipolar resistance switching behavior of this material. The endurance and retention tests indicate a potential application of the fabricated cells for nonvolatile resistance switching random access memory (RRAM). The results suggest formation and rupture of one or several nanoscale copper filaments as the resistance switching mechanism in the cuprous oxide films. At high electric voltage in the as-deposited state of Au/Cu₂O/Au-Pd cell structure, the conduction behavior follows Poole-Frenkel emission. Various parameters, such as the compliance current, the cuprous oxide microstructure, the cuprous oxide thickness, top electrode area, and top electrode material, affect the resistance switching characteristics. The required FORMING voltage is higher for Au/Cu₂O/Al cell compared with the Au/Cu₂O/Pt which is related to the Schottky behavior of Al contact with Cu₂O. Cu₂O nanowires in Au-Pt/ Cu₂O/Au-Pt cell also show resistance switching behavior, indicating scalable potential of this cell for usage as RRAM. After an initial FORMING process under an electric field of 3 x 10⁶ V/m, the Cu₂O nanowire is switched to the LRS. During the FORMING process physical damages are observed in the cell, which may be caused by Joule heating and gas evolution"--Abstract, page iii.</p>

Name thesis:degree_name

Ph. D. in Materials Science and Engineering

Grantor

Missouri University of Science and Technology

Year dc:date.available

2016

Author dc:creator

• Yazdanparast, Sanaz

• Materials Science and Engineering

Repository record dc:identifier

https://scholarsmine.mst.edu/doctoral_dissertations/2424

OAI identifier oai:identifier

oai:scholarsmine.mst.edu:doctoral_dissertations-3426