In this work, the resistance switching behavior of electrodeposited cuprous oxide (Cu2O) thin films in Au/Cu2O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial FORMING process, the fabricated cells show reversible switching between a low resistance state (16.6 Ω) and a high resistance state (0.4 x 106 Ω). Changing the resistance states in cuprous oxide films depends on the magnitude of the applied voltage which corresponds to unipolar resistance switching behavior of this material. The endurance and retention tests indicate a potential application of the fabricated cells for nonvolatile resistance switching random access memory (RRAM). The results suggest formation and rupture of one or several nanoscale copper filaments as the resistance switching mechanism in the cuprous oxide films. At high electric voltage in the as-deposited state of Au/Cu2O/Au-Pd cell structure, the conduction behavior follows Poole-Frenkel emission. Various parameters, such as the compliance current, the cuprous oxide microstructure, the cuprous oxide thickness, top electrode area, and top electrode material, affect the resistance switching characteristics. The required FORMING voltage is higher for Au/Cu2O/Al cell compared with the Au/Cu2O/Pt which is related to the Schottky behavior of Al contact with Cu2O. Cu2O nanowires in Au-Pt/ Cu2O/Au-Pt cell also show resistance switching behavior, indicating scalable potential of this cell for usage as RRAM. After an initial FORMING process under an electric field of 3 x 106 V/m, the Cu2O nanowire is switched to the LRS. During the FORMING process physical damages are observed in the cell, which may be caused by Joule heating and gas evolution\"--Abstract, page iii.
","abstract_html":"<p>In this work, the resistance switching behavior of electrodeposited cuprous oxide (Cu<sub>2</sub>O) thin films in Au/Cu<sub>2</sub>O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial FORMING process, the fabricated cells show reversible switching between a low resistance state (16.6 Ω) and a high resistance state (0.4 x 10<sup>6</sup> Ω). Changing the resistance states in cuprous oxide films depends on the magnitude of the applied voltage which corresponds to unipolar resistance switching behavior of this material. The endurance and retention tests indicate a potential application of the fabricated cells for nonvolatile resistance switching random access memory (RRAM). The results suggest formation and rupture of one or several nanoscale copper filaments as the resistance switching mechanism in the cuprous oxide films. At high electric voltage in the as-deposited state of Au/Cu<sub>2</sub>O/Au-Pd cell structure, the conduction behavior follows Poole-Frenkel emission. Various parameters, such as the compliance current, the cuprous oxide microstructure, the cuprous oxide thickness, top electrode area, and top electrode material, affect the resistance switching characteristics. The required FORMING voltage is higher for Au/Cu<sub>2</sub>O/Al cell compared with the Au/Cu<sub>2</sub>O/Pt which is related to the Schottky behavior of Al contact with Cu<sub>2</sub>O. Cu<sub>2</sub>O nanowires in Au-Pt/ Cu<sub>2</sub>O/Au-Pt cell also show resistance switching behavior, indicating scalable potential of this cell for usage as RRAM. After an initial FORMING process under an electric field of 3 x 10<sup>6</sup> V/m, the Cu<sub>2</sub>O nanowire is switched to the LRS. During the FORMING process physical damages are observed in the cell, which may be caused by Joule heating and gas evolution"--Abstract, page iii.</p>","abstract_has_math":false,"creators":["Yazdanparast, Sanaz"],"institution":"Missouri University of Science and Technology","degree_name":"Ph. D. in Materials Science and Engineering","degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-02-10T08:00:00Z","date_published":"2016-02-10T08:00:00Z","updated_at":"2026-07-24T03:19:04Z","subjects":["Materials Science and Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarsmine.mst.edu/doctoral_dissertations/2424","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Yazdanparast, Sanaz"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2016-02-10T08:00:00Z"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation - Open Access"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. D. in Materials Science and Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Missouri University of Science and Technology"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Materials Science and Engineering"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarsmine.mst.edu/doctoral_dissertations/2424"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this work, the resistance switching behavior of electrodeposited cuprous oxide (Cu2O) thin films in Au/Cu2O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial FORMING process, the fabricated cells show reversible switching between a low resistance state (16.6 Ω) and a high resistance state (0.4 x 106 Ω). Changing the resistance states in cuprous oxide films depends on the magnitude of the applied voltage which corresponds to unipolar resistance switching behavior of this material. The endurance and retention tests indicate a potential application of the fabricated cells for nonvolatile resistance switching random access memory (RRAM). The results suggest formation and rupture of one or several nanoscale copper filaments as the resistance switching mechanism in the cuprous oxide films. At high electric voltage in the as-deposited state of Au/Cu2O/Au-Pd cell structure, the conduction behavior follows Poole-Frenkel emission. Various parameters, such as the compliance current, the cuprous oxide microstructure, the cuprous oxide thickness, top electrode area, and top electrode material, affect the resistance switching characteristics. The required FORMING voltage is higher for Au/Cu2O/Al cell compared with the Au/Cu2O/Pt which is related to the Schottky behavior of Al contact with Cu2O. Cu2O nanowires in Au-Pt/ Cu2O/Au-Pt cell also show resistance switching behavior, indicating scalable potential of this cell for usage as RRAM. After an initial FORMING process under an electric field of 3 x 106 V/m, the Cu2O nanowire is switched to the LRS. During the FORMING process physical damages are observed in the cell, which may be caused by Joule heating and gas evolution\"--Abstract, page iii.
"]},{"key":"dc:title","label":"Title","values":["Resistance switching of electrodeposited cuprous oxide"]}]}],"canonical_facts":{"dc:creator":["Yazdanparast, Sanaz"],"dc:date.available":["2016-02-10T08:00:00Z"],"dc:description.abstract":["In this work, the resistance switching behavior of electrodeposited cuprous oxide (Cu2O) thin films in Au/Cu2O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial FORMING process, the fabricated cells show reversible switching between a low resistance state (16.6 Ω) and a high resistance state (0.4 x 106 Ω). Changing the resistance states in cuprous oxide films depends on the magnitude of the applied voltage which corresponds to unipolar resistance switching behavior of this material. The endurance and retention tests indicate a potential application of the fabricated cells for nonvolatile resistance switching random access memory (RRAM). The results suggest formation and rupture of one or several nanoscale copper filaments as the resistance switching mechanism in the cuprous oxide films. At high electric voltage in the as-deposited state of Au/Cu2O/Au-Pd cell structure, the conduction behavior follows Poole-Frenkel emission. Various parameters, such as the compliance current, the cuprous oxide microstructure, the cuprous oxide thickness, top electrode area, and top electrode material, affect the resistance switching characteristics. The required FORMING voltage is higher for Au/Cu2O/Al cell compared with the Au/Cu2O/Pt which is related to the Schottky behavior of Al contact with Cu2O. Cu2O nanowires in Au-Pt/ Cu2O/Au-Pt cell also show resistance switching behavior, indicating scalable potential of this cell for usage as RRAM. After an initial FORMING process under an electric field of 3 x 106 V/m, the Cu2O nanowire is switched to the LRS. During the FORMING process physical damages are observed in the cell, which may be caused by Joule heating and gas evolution\"--Abstract, page iii.
"],"dc:identifier":["https://scholarsmine.mst.edu/doctoral_dissertations/2424"],"dc:subject":["Materials Science and Engineering"],"dc:title":["Resistance switching of electrodeposited cuprous oxide"],"dc:type":["Dissertation - Open Access"],"thesis:degree_name":["Ph. D. in Materials Science and Engineering"],"thesis:institution_name":["Missouri University of Science and Technology"]},"updated_at":"2026-07-24T03:19:04Z"}