Development of Ti-Si-N and Ta-Si-N as diffusion barriers

"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere"--Abstract, page iv.

Name thesis:degree_name

Ph. D. in Materials Science and Engineering

Grantor

University of Missouri--Rolla

Year dc:date.available

2016

Author dc:creator

• You, Shaoxin

• Diffusion barrier
• Materials Science and Engineering

Repository record dc:identifier

https://scholarsmine.mst.edu/doctoral_dissertations/1639

OAI identifier oai:identifier

oai:scholarsmine.mst.edu:doctoral_dissertations-2641