{"id":{"repo_id":"must-thes","oai_identifier":"oai:scholarsmine.mst.edu:doctoral_dissertations-2641"},"canonical_url":"https://search.dev.ndltd.org/etd/must-thes/oai:scholarsmine.mst.edu:doctoral_dissertations-2641","repository":{"repo_id":"must-thes","name":"Missouri University of Science and Technology","base_url":"https://scholarsmine.mst.edu/do/oai/"},"display":{"title":"Development of Ti-Si-N and Ta-Si-N as diffusion barriers","abstract":"\"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere\"--Abstract, page iv.","abstract_html":""Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere"--Abstract, page iv.","abstract_has_math":false,"creators":["You, Shaoxin"],"institution":"University of Missouri--Rolla","degree_name":"Ph. D. in Materials Science and Engineering","degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-02-10T08:00:00Z","date_published":"2016-02-10T08:00:00Z","updated_at":"2026-07-24T03:18:57Z","subjects":["Diffusion barrier","Materials Science and Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarsmine.mst.edu/doctoral_dissertations/1639","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["You, Shaoxin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2016-02-10T08:00:00Z"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation - Citation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. D. in Materials Science and Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Missouri--Rolla"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Diffusion barrier","Materials Science and Engineering"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarsmine.mst.edu/doctoral_dissertations/1639"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["\"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere\"--Abstract, page iv."]},{"key":"dc:title","label":"Title","values":["Development of Ti-Si-N and Ta-Si-N as diffusion barriers"]}]}],"canonical_facts":{"dc:creator":["You, Shaoxin"],"dc:date.available":["2016-02-10T08:00:00Z"],"dc:description.abstract":["\"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere\"--Abstract, page iv."],"dc:identifier":["https://scholarsmine.mst.edu/doctoral_dissertations/1639"],"dc:subject":["Diffusion barrier","Materials Science and Engineering"],"dc:title":["Development of Ti-Si-N and Ta-Si-N as diffusion barriers"],"dc:type":["Dissertation - Citation"],"thesis:degree_name":["Ph. D. in Materials Science and Engineering"],"thesis:institution_name":["University of Missouri--Rolla"]},"updated_at":"2026-07-24T03:18:57Z"}