The Growth and Characterization of GaN Thin Films on SiC Substrates

Optical devices based on III-V nitrides operating in the visible region involve GaN based materials. The development of such devices first requires the optimization of GaN crystal quality. This thesis addresses issues related to substrate cleaning and growth of high quality GaN on C-terminated 6H-SiC substrates by molecular beam epitaxy. Good substrate cleaning methods by H₂: He (1:1) plasma at 940°C for 100 minutes have been used to obtain GaN thin films with excellent structural and optoelectronic properties. The full-width at half-maximum values of the x-ray diffraction and photoluminescence peaks are about 90 arc-second and 1.4 meV at 4.2K for C-termnated 6H-SiC substrates, respectively.

Name thesis:degree_name

Master of Science in Materials Science

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Physics, Astronomy, and Materials Science

Year

2000

Author dc:creator

• Cai, Ailing

Contributors dc:contributor

• Shyang Hwang

• Materials Science and Engineering

Statement dc:rights

• © Ailing Cai

Repository record dc:identifier

https://bearworks.missouristate.edu/theses/839

OAI identifier oai:identifier

oai:bearworks.missouristate.edu:theses-1840