{"id":{"repo_id":"mo-state","oai_identifier":"oai:bearworks.missouristate.edu:theses-1840"},"canonical_url":"https://search.dev.ndltd.org/etd/mo-state/oai:bearworks.missouristate.edu:theses-1840","repository":{"repo_id":"mo-state","name":"Missouri State University","base_url":"https://bearworks.missouristate.edu/do/oai/"},"display":{"title":"The Growth and Characterization of GaN Thin Films on SiC Substrates","abstract":"Optical devices based on III-V nitrides operating in the visible region involve GaN based materials. The development of such devices first requires the optimization of GaN crystal quality. This thesis addresses issues related to substrate cleaning and growth of high quality GaN on C-terminated 6H-SiC substrates by molecular beam epitaxy. Good substrate cleaning methods by H₂: He (1:1) plasma at 940°C for 100 minutes have been used to obtain GaN thin films with excellent structural and optoelectronic properties. The full-width at half-maximum values of the x-ray diffraction and photoluminescence peaks are about 90 arc-second and 1.4 meV at 4.2K for C-termnated 6H-SiC substrates, respectively.","abstract_html":"Optical devices based on III-V nitrides operating in the visible region involve GaN based materials. The development of such devices first requires the optimization of GaN crystal quality. This thesis addresses issues related to substrate cleaning and growth of high quality GaN on C-terminated 6H-SiC substrates by molecular beam epitaxy. Good substrate cleaning methods by H₂: He (1:1) plasma at 940°C for 100 minutes have been used to obtain GaN thin films with excellent structural and optoelectronic properties. The full-width at half-maximum values of the x-ray diffraction and photoluminescence peaks are about 90 arc-second and 1.4 meV at 4.2K for C-termnated 6H-SiC substrates, respectively.","abstract_has_math":false,"creators":["Cai, Ailing"],"institution":null,"degree_name":"Master of Science in Materials Science","degree_level":"Masters","degree_discipline":"Physics, Astronomy, and Materials Science","degree_department":null,"school":null,"contributors":["Shyang Hwang"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2000,"date_issued":"2000-05-01T07:00:00Z","date_published":"2000-05-01T07:00:00Z","updated_at":"2026-07-24T03:15:54Z","subjects":["Materials Science and Engineering"],"languages":[],"rights":["© Ailing Cai"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://bearworks.missouristate.edu/theses/839","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Shyang Hwang"]},{"key":"dc:creator","label":"Author","values":["Cai, Ailing"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics, Astronomy, and Materials Science"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Materials Science"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Materials Science and Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["© Ailing Cai"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://bearworks.missouristate.edu/theses/839"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Optical devices based on III-V nitrides operating in the visible region involve GaN based materials. The development of such devices first requires the optimization of GaN crystal quality. This thesis addresses issues related to substrate cleaning and growth of high quality GaN on C-terminated 6H-SiC substrates by molecular beam epitaxy. Good substrate cleaning methods by H₂: He (1:1) plasma at 940°C for 100 minutes have been used to obtain GaN thin films with excellent structural and optoelectronic properties. The full-width at half-maximum values of the x-ray diffraction and photoluminescence peaks are about 90 arc-second and 1.4 meV at 4.2K for C-termnated 6H-SiC substrates, respectively."]},{"key":"dc:title","label":"Title","values":["The Growth and Characterization of GaN Thin Films on SiC Substrates"]}]}],"canonical_facts":{"dc:contributor":["Shyang Hwang"],"dc:creator":["Cai, Ailing"],"dc:description.abstract":["Optical devices based on III-V nitrides operating in the visible region involve GaN based materials. The development of such devices first requires the optimization of GaN crystal quality. This thesis addresses issues related to substrate cleaning and growth of high quality GaN on C-terminated 6H-SiC substrates by molecular beam epitaxy. Good substrate cleaning methods by H₂: He (1:1) plasma at 940°C for 100 minutes have been used to obtain GaN thin films with excellent structural and optoelectronic properties. The full-width at half-maximum values of the x-ray diffraction and photoluminescence peaks are about 90 arc-second and 1.4 meV at 4.2K for C-termnated 6H-SiC substrates, respectively."],"dc:identifier":["https://bearworks.missouristate.edu/theses/839"],"dc:rights":["© Ailing Cai"],"dc:subject":["Materials Science and Engineering"],"dc:title":["The Growth and Characterization of GaN Thin Films on SiC Substrates"],"thesis:degree_discipline":["Physics, Astronomy, and Materials Science"],"thesis:degree_level":["Masters"],"thesis:degree_name":["Master of Science in Materials Science"]},"updated_at":"2026-07-24T03:15:54Z"}