Efficient wireless charging with gallium nitride FETs

Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of wireless charging systems is equivalent to reducing the sources of loss in the system. In this work, we focus on losses originating from the transistor. Resonant inductive wireless charging systems were designed and implemented for efficiency comparisons. We show in our experiments that replacing the traditional Silicon MOSFET with a Gallium Nitride FET can increase the overall system efficiency by 5%.

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2014

Author dc:creator

• Yeh, Theresa (Theresa I.)

Advisor dc:contributor.advisor

• Anantha Chandrakasan and Tomás Palacios.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/91881

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/91881