{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/91881"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/91881","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Efficient wireless charging with gallium nitride FETs","abstract":"Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of wireless charging systems is equivalent to reducing the sources of loss in the system. In this work, we focus on losses originating from the transistor. Resonant inductive wireless charging systems were designed and implemented for efficiency comparisons. We show in our experiments that replacing the traditional Silicon MOSFET with a Gallium Nitride FET can increase the overall system efficiency by 5%.","abstract_html":"Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of wireless charging systems is equivalent to reducing the sources of loss in the system. In this work, we focus on losses originating from the transistor. Resonant inductive wireless charging systems were designed and implemented for efficiency comparisons. 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