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Massachusetts Institute of Technology

Vertically integrated transistors for field emission applications

Abstract

dc:description.abstract

Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability and operating characteristics. This research effort investigates the integration of vertical MOS transistors with field emitter arrays as a means to enhance field emission device capabilities and range of applications. Vertical MOSFET device modeling was performed using MEDICI, a commercially available electrostatic simulator. In addition, process modeling was conducted using SUPREM to optimize design and layout sequencing for device fabrication. Working devices were fabricated and tested in the Integrated Circuits Laboratory within the Microsystems and Technology Laboratory at MIT. Techniques to achieve high-density field emitter arrays necessary for integrated VMOS / FEA devices were also investigated. This study determined that it is feasible to integrate and control field emitter arrays with vertical MOSFET devices.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2000

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Herz, Paul Richard, 1972-
Advisor dc:contributor.advisor
  • Akintunde I. Akinwande.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/9069
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/9069

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Herz, Paul Richard, 1972-. Vertically integrated transistors for field emission applications. Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/9069