{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/9069"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/9069","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Vertically integrated transistors for field emission applications","abstract":"Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability and operating characteristics. This research effort investigates the integration of vertical MOS transistors with field emitter arrays as a means to enhance field emission device capabilities and range of applications. Vertical MOSFET device modeling was performed using MEDICI, a commercially available electrostatic simulator. In addition, process modeling was conducted using SUPREM to optimize design and layout sequencing for device fabrication. Working devices were fabricated and tested in the Integrated Circuits Laboratory within the Microsystems and Technology Laboratory at MIT. Techniques to achieve high-density field emitter arrays necessary for integrated VMOS / FEA devices were also investigated. This study determined that it is feasible to integrate and control field emitter arrays with vertical MOSFET devices.","abstract_html":"Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability and operating characteristics. This research effort investigates the integration of vertical MOS transistors with field emitter arrays as a means to enhance field emission device capabilities and range of applications. Vertical MOSFET device modeling was performed using MEDICI, a commercially available electrostatic simulator. In addition, process modeling was conducted using SUPREM to optimize design and layout sequencing for device fabrication. Working devices were fabricated and tested in the Integrated Circuits Laboratory within the Microsystems and Technology Laboratory at MIT. Techniques to achieve high-density field emitter arrays necessary for integrated VMOS / FEA devices were also investigated. This study determined that it is feasible to integrate and control field emitter arrays with vertical MOSFET devices.","abstract_has_math":false,"creators":["Herz, Paul Richard, 1972-"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Akintunde I. Akinwande."],"committee_chairs":[],"committee_members":[],"year":2000,"date_issued":"2000","date_published":"2000","updated_at":"2026-07-22T22:20:51Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/9069","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Akintunde I. Akinwande."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. 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They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/9069"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.","Includes bibliographical references (p. 101-105)."]},{"key":"dc:description.abstract","label":"Abstract","values":["Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability and operating characteristics. This research effort investigates the integration of vertical MOS transistors with field emitter arrays as a means to enhance field emission device capabilities and range of applications. Vertical MOSFET device modeling was performed using MEDICI, a commercially available electrostatic simulator. In addition, process modeling was conducted using SUPREM to optimize design and layout sequencing for device fabrication. Working devices were fabricated and tested in the Integrated Circuits Laboratory within the Microsystems and Technology Laboratory at MIT. Techniques to achieve high-density field emitter arrays necessary for integrated VMOS / FEA devices were also investigated. This study determined that it is feasible to integrate and control field emitter arrays with vertical MOSFET devices."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Vertically integrated transistors for field emission applications"]}]}],"canonical_facts":{"dc:contributor.advisor":["Akintunde I. Akinwande."],"dc:contributor.department":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:creator":["Herz, Paul Richard, 1972-"],"dc:date.accessioned":["2005-08-24T19:25:33Z"],"dc:date.available":["2005-08-24T19:25:33Z"],"dc:date.issued":["2000"],"dc:description":["Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.","Includes bibliographical references (p. 101-105)."],"dc:description.abstract":["Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability and operating characteristics. This research effort investigates the integration of vertical MOS transistors with field emitter arrays as a means to enhance field emission device capabilities and range of applications. Vertical MOSFET device modeling was performed using MEDICI, a commercially available electrostatic simulator. In addition, process modeling was conducted using SUPREM to optimize design and layout sequencing for device fabrication. Working devices were fabricated and tested in the Integrated Circuits Laboratory within the Microsystems and Technology Laboratory at MIT. Techniques to achieve high-density field emitter arrays necessary for integrated VMOS / FEA devices were also investigated. This study determined that it is feasible to integrate and control field emitter arrays with vertical MOSFET devices."],"dc:description.degree":["S.M."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/1721.1/9069"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Vertically integrated transistors for field emission applications"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:20:51Z"}