Simulation of iron impurity gettering in crystalline silicon solar cells

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also includes a device simulator to calculate cell performance after processing. By linking input materials, processing, and cell performance, 12E enables accelerated solar cell optimization. Herein, background information on the economic drivers of solar cell installations and manufacturing are used to introduce the importance of iron impurity engineering. The fundamental physics of gettering and the development of the numerical methods employed by the tool are presented. The development, deployment, and use of the web applet are also discussed.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Mechanical Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2012

Author dc:creator

• Powell, Douglas M. (Douglas Michael)

Advisor dc:contributor.advisor

• Tonio Buonassisi.

• Mechanical Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/74988

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/74988