High fidelity pattern transfer in InP photonic device fabrication

The photonic industry is driven by the information ages demand for higher bandwidth. To meet the future demands of 10 Tbit networks, photonic integrated circuits (PIC) are required. Device performance is affected by everything from component coupling to electrical connectivity of the active components. However the most fundamental and often challenging aspect of photonic device fabrication is dimensional control. At 1550 nm, line width tolerance range between 1 pm to 0.05 pm.[1] Although these tolerances are easily achieved using lithography technology such as electron beam lithography (EBL) or 193 nm projection, neither are viable optical options for InP production.[2] The purpose of this thesis is to develop a fabrication process for InP Faraday rotators using standard, high throughput lithographic and etching techniques. The Faraday rotator is a 1.4 Jim InP-InGaAsP-InP waveguide with a line width tolerance of ± 0.07 pm.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2010

Author dc:creator

• Kapusta, Evelyn Wallis

Advisor dc:contributor.advisor

• Rajeev R. Ram.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/62448

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/62448