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Showing 1 to 20 of 29 for “"InGaAsP"”.
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Femtosecond nonlinearities in InGaAsP diode lasers
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1993.
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Wavelength conversion by four wave mixing in passive InGaAsP/InP waveguides
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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The integration of InP /InGaAsP ridge waveguide structures with dielectric waveguides on silicon
… vapor deposition (PECVD). The integrated InP/InGaAsP structures were fabricated using an existing novel technique for preparing very thin (on the order of 5 pm thick) substrate free rectangular structures (approximately 145 pm wide by 300 pm long) with cleaved facets. Using a pick-and-place …
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Femtosecond gain-index coupling in femtosecond nonlinearity measurements of InGaAsP diode laser amplifiers
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Développement d'un procédé de gravure plasma pour la fabrication de composants photoniques à base d'hétérostructures InP/InGaAsP
Le but du projet est de développer un procédé de gravure stable et bien intégré dans le processus complet de fabrication de dispositifs photoniques à base d'InP. Le présent document expose le résultat de différents procédés de gravure sur échantillons à base d'InP. La préparation des échantillons …
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The Characterization of Liquid Phase Epitaxial Indium-Gallium - Arsenide - Phosphide and Indium-Gallium - Arsenide
The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray …
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Liquid Phase Epitaxial Indium-Gallium-Arsenide - Phosphide Avalanche Photodiodes for Near-Infrared Detection
The fabrication and characterization of InGaAsP/InP avalanche photodiodes for near-infrared detection is described in detail. Particular material requirements which must be satisfied for these devices are considered and the special techniques involved in the use of liquid phase epitaxy which have …
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Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication
… and photonics. However, MacEtch of InGaAsP, an important quaternary semiconductor for long wavelength communications, is yet to be reported. This thesis demonstrates the fabrication of InGaAsP gratings for distributed feedback (DFB) lasers by MacEtch as well as antireflection …
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Vapor Phase Epitaxial Growth of Gallium Arsenide, Indium Phosphide, and Indium Gallium Arsenide by the Hydride Technique
The use of InGaAsP alloys for optical fiber communication systems is discussed. The advantages and various types of vapor phase epitaxial growth systems are examined before looking at the open tube growth process in detail. Using the criteria for high purity systems, which are thoroughly reviewed, …
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Liquid phase epitaxial growth and heterointerface characteristics of long-wavelength indium gallium arsenide phosphide heterostructures
"Data are presented that demonstrate that the InGaAsP quaternary grown by constant temperature liquid phase epitaxy on InP substrate can, under certain growth conditions, exhibit considerably narrower diffraction profile half-widths than previously reported. The double crystal x-ray diffraction …
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Characterization of reactive ion etching of III-V compound semiconductor materials
… materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period …
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High-purity epitaxial growth and characterization of III-V compound semiconductors
… better assess the crystalline homogeneity of the InGaAsP alloy system.
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Nonlinear Optics in III-V Quaternary Semiconductor Waveguides
… on quaternary III-V semiconductors AlGaAsSb and InGaAsP. We present modal analysis for waveguide designs and show that effective mode area much less than 1 $\mu m^{2}$ can be obtained. We also report specific waveguide designs that display zero-dispersion points at the specific wavelength ranges …
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Solution Kinetics and Impact Ionization in the Indium-Gallium - Arsenide Phosphide Alloy System (Crystal Growth, Photodetectors)
… device fabrication, and device physics in the InGaAsP/InP material system. It is divided into three sections. Chapter I is a detailed account of the liquid phase epitaxial (LPE) crystal growth of In(,1-x)Ga(,x)As(,y)P(,1-y) layers lattice-matched to InP substrates. It covers many aspects of the …
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Study of Type-I and Type-Ii Strained Quantum -Well Lasers
… studied. For a type-I QW structure, the 1.55-pm InGaAsP and InGaAlAs QW lasers are investigated both in the steady-state and high-speed modulation schemes. We show excellent agreement of our experimental data with the results of our theoretical gain model with many-body effects. The …
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High fidelity pattern transfer in InP photonic device fabrication
… techniques. The Faraday rotator is a 1.4 Jim InP-InGaAsP-InP waveguide with a line width tolerance of ± 0.07 pm.
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Contribución al desarrollo de dispositivos y estructuras fotónicas con amplificación para procesado óptico.
… en fosfuro de indio, con el cuaternario ingaasp como elemento de guiado, para el procesado óptico de señales ópticas.
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Développement d'un procédé pour la réalisation de diodes laser stabilisées en fréquence sans reprise d'épitaxie
… L'hétérostructure utilisée est du InGaAs/InGaAsP/InP. Le procédé de fabrication consiste en premier lieu de lithographie par faisceau d'électrons, de photolithographie et finalement de gravure plasma. Le masque de gravure est fait d'un agencement d'oxyde de silicium et de chrome, soient …
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