Salty development of an optical photoresist

In this series of experiments, we add salt to a photoresist developer and observe the effect on photoresist contrast. In order to measure contrast, we designed an anti-reflection coating stack to reduce reflections between the photomask and the photoresist. After development, we observe that for 400 nm exposures of photoresist PS4 that there is no significant change in contrast with salty development, however, for samples exposed at 220 nm, there is contrast enhancement. However, it is not clear how much of the contrast enhancement for the 220 nm samples was due to the shorter wavelength, and how much was due to a different developer concentration versus the 400 nm samples. That being said, we hypothesize that the observed contrast enhancement is due to differences in photoresist cross-linking due to the different wavelength exposures.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Physics.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2008

Author dc:creator

• Chao, Adam (Adam C.)

Advisor dc:contributor.advisor

• Karl K. Berggren.

• Physics.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/44823

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/44823