{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/44823"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/44823","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Salty development of an optical photoresist","abstract":"In this series of experiments, we add salt to a photoresist developer and observe the effect on photoresist contrast. In order to measure contrast, we designed an anti-reflection coating stack to reduce reflections between the photomask and the photoresist. After development, we observe that for 400 nm exposures of photoresist PS4 that there is no significant change in contrast with salty development, however, for samples exposed at 220 nm, there is contrast enhancement. However, it is not clear how much of the contrast enhancement for the 220 nm samples was due to the shorter wavelength, and how much was due to a different developer concentration versus the 400 nm samples. That being said, we hypothesize that the observed contrast enhancement is due to differences in photoresist cross-linking due to the different wavelength exposures.","abstract_html":"In this series of experiments, we add salt to a photoresist developer and observe the effect on photoresist contrast. In order to measure contrast, we designed an anti-reflection coating stack to reduce reflections between the photomask and the photoresist. After development, we observe that for 400 nm exposures of photoresist PS4 that there is no significant change in contrast with salty development, however, for samples exposed at 220 nm, there is contrast enhancement. However, it is not clear how much of the contrast enhancement for the 220 nm samples was due to the shorter wavelength, and how much was due to a different developer concentration versus the 400 nm samples. That being said, we hypothesize that the observed contrast enhancement is due to differences in photoresist cross-linking due to the different wavelength exposures.","abstract_has_math":false,"creators":["Chao, Adam (Adam C.)"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Physics.","school":null,"contributors":[],"advisors":["Karl K. Berggren."],"committee_chairs":[],"committee_members":[],"year":2008,"date_issued":"2008","date_published":"2008","updated_at":"2026-07-22T22:21:04Z","subjects":["Physics."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/44823","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Karl K. Berggren."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Physics."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. 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In order to measure contrast, we designed an anti-reflection coating stack to reduce reflections between the photomask and the photoresist. After development, we observe that for 400 nm exposures of photoresist PS4 that there is no significant change in contrast with salty development, however, for samples exposed at 220 nm, there is contrast enhancement. However, it is not clear how much of the contrast enhancement for the 220 nm samples was due to the shorter wavelength, and how much was due to a different developer concentration versus the 400 nm samples. That being said, we hypothesize that the observed contrast enhancement is due to differences in photoresist cross-linking due to the different wavelength exposures."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.B."]},{"key":"dc:title","label":"Title","values":["Salty development of an optical photoresist"]}]}],"canonical_facts":{"dc:contributor.advisor":["Karl K. 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However, it is not clear how much of the contrast enhancement for the 220 nm samples was due to the shorter wavelength, and how much was due to a different developer concentration versus the 400 nm samples. That being said, we hypothesize that the observed contrast enhancement is due to differences in photoresist cross-linking due to the different wavelength exposures."],"dc:description.degree":["S.B."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/44823"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 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