Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm

The electron effective mobility in ultrathin-body (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) are observed in SSDOI compared to unstrained SOI for body thicknesses above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2007

Author dc:creator

• Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology

Advisor dc:contributor.advisor

• Judy L. Hoyt.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/38671

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/38671